Bis(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate)barium 二(6,6,7,7,8,8,8-七氟-2,2-二甲基-3,5-辛二酮)钡
CAS 36885-31-1 MFCD00070455
化学结构图
SMILES: CC(C)(C)/C(=C/C(=O)C(F)(F)C(F)(F)C(F)(F)F)/O[Ba]O/C(=C\C(=O)C(F)(F)C(F)(F)C(F)(F)F)/C(C)(C)C
化学属性
| Mol. Formula | Ba(OCC(CH3)3CHCOCF2CF2CF3)2 |
|---|---|
| Mol. Weight | 727.68 |
| Melting Point | 92-96 °C(lit.) |
| Appearance | white to off-white pwdr. |
| Boiling Point | dec. 280-300°C (subl. 210°C/0.2mm) |
| Danger-Level | - |
| pH | -:- |
| Redox | - |
别名和识别编码
| Chemical Name | Barium bis(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate)barium |
|---|---|
| Synonym | Ba(FOD)2 二(6,6,7,7,8,8,8-七氟-2,2-二甲基-3,5-辛二酮)钡 |
| MDL Number | MFCD00070455 |
| PubChem Substance ID | 24872955 |
| CAS Number | 36885-31-1 |
| Chemical Name Translation | 二(6,6,7,7,8,8,8-七氟-2,2-二甲基-3,5-辛二酮)钡 |
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分类
- {SNA} Barium, Micro/NanoElectronics, Solution Deposition Precursors, 材料科学
- Barium, Materials Science, Micro/NanoElectronics, Solution Deposition Precursors
- {SA} Barium, Materials Science, Micro/NanoElectronics, Solution Deposition Precursors
安全信息
GHS Symbol
- H332 Harmful if inhaled 吸入有害
- H302 Harmful if swallowed 吞食有害
- S28 After contact with skin, wash immediately with plenty of ... (to be specified by the manufacturer) 皮肤接触后，立即用大量…（由生产厂家指定）冲洗；
- R20/22 Harmful by inhalation and if swallowed 吸入和不慎吞咽有害
