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• {SA} Electronic Materials, Materials Science, Micro/NanoElectronics, Organic and Printed Electronics, Single Crystal Substrates, Substrates, Substrates and Electrode Materials
• {SNA} Electronic Materials, Micro/NanoElectronics, Organic and Printed Electronics, Single Crystal Substrates, Substrates, Substrates and Electrode Materials, 材料科学
• {SNA} Electronic Materials, Materials Science, Micro/NanoElectronics, Organic and Printed Electronics, Single Crystal Substrates, Substrates, Substrates and Electrode Materials

相关文献及参考

• Short: III/12c Title: Magnetic and Other Properties of Oxides and Related Compounds: Hexagonal Ferrites. Special Lanthanide and Actinide Compounds Author: Arons, R.R.; Bonnenberg, D.; Grünberg, P.; Hempel, K.A.; Köbler, U.; Lütgemeier, H.; Maletta, H.J.; Roos, W.; Sauer, Ch.; Zinn, W. Editor: Hellwege, K.-H.; Hellwege, A.M. Source: Landolt-Börnstein, New Series Volume: III/12c Year: 1982 ISBN: 3-540-10137-3 ISBN: 978-3-540-10137-6 Internet Resource: DOI:10.1007/b19987 RefComment: 1034 figs., XI, 604 pages. Hardcover
• Short: III/15a Title: Metals: Electronic Transport Phenomena: Electrical Resistivity, Kondo and Spin Fluctuation Systems, Spin Glasses and Thermopower Author: Bass, J.; Fischer, K.H. Editor: Hellwege, K.-H.; Olsen, J.L. Source: Landolt-Börnstein, New Series Volume: III/15a Year: 1982 ISBN: 3-540-11082-8 ISBN: 978-3-540-11082-8 Internet Resource: DOI:10.1007/b29240 RefComment: 875 figs., VIII, 396 pages. Hardcover Abstract: The first two subvolumes of volume III/15 contain data on electrical transport in metals. Both experimental and theoretical results published up to 1981 have been included. In the third subvolume data on thermal - predominantly electronic - transport of pure metals and alloys are presented, the literature up to 1989 has been taken into account.
• Short: III/23a Title: Electronic Structure of Solids: Photoemission Spectra and Related Data Author: Chiang, T.C.; Frank, K.H.; Freund, H.J.; Goldmann, A.; Himpsel, F.J.; Karlsson, U.; Leckey, R.C.; Schneider, W.D. Editor: Goldmann, A.; Koch, E.-E. Source: Landolt-Börnstein, New Series Volume: III/23a Page: 1-430 Year: 1989 ISBN: 3-540-50042-1 ISBN: 978-3-540-50042-1 Internet Resource: DOI:10.1007/b35974 RefComment: 904 figs., XI, Hardcover Abstract: Photoelectron spectroscopy has matured considerably during the last decade. The experimental techniques were improved markedly. Photon line sources and,in particular, synchrotron radiation sources are no

安全信息

GHS Symbol

TYPE OF TEST            : LD30 - Lethal Dose
ROUTE OF EXPOSURE       : Intraperitoneal
SPECIES OBSERVED        : Rodent - rat
DOSE/DURATION           : 10 gm/kg
TOXIC EFFECTS :
   Behavioral - excitement
   Behavioral - ataxia
   Lungs, Thorax, or Respiration - respiratory stimulation
REFERENCE :
   GTPZAB Gigiena Truda i Professional'nye Zabolevaniya.  Labor Hygiene and
   Occupational Diseases. (V/O Mezhdunarodnaya Kniga, 113095 Moscow, USSR)
   V.1-36, 1957-1992. For publisher information, see MTPEEI
   Volume(issue)/page/year: 24(3),45,1980

TYPE OF TEST            : LD50 - Lethal dose, 50 percent kill
ROUTE OF EXPOSURE       : Intraperitoneal
SPECIES OBSERVED        : Rodent - mouse
DOSE/DURATION           : 4700 mg/kg
TOXIC EFFECTS :
   Peripheral Nerve and Sensation - flaccid paralysis without anesthesia
   (usually neuromuscular blockage)
   Behavioral - somnolence (general depressed activity)
   Behavioral - food intake (animal)
REFERENCE :
   GISAAA Gigiena i Sanitariya.  For English translation, see HYSAAV.  (V/O
   Mezhdunarodnaya Kniga, 113095 Moscow, USSR)  V.1-    1936-
   Volume(issue)/page/year: 45(10),13,1980

TYPE OF TEST            : TDLo - Lowest published toxic dose
ROUTE OF EXPOSURE       : Intratracheal
SPECIES OBSERVED        : Rodent - rat
DOSE                    : 123 mg/kg
SEX/DURATION            : male 8 week(s) pre-mating
TOXIC EFFECTS :
   Reproductive - Paternal Effects - spermatogenesis (incl. genetic material,
   sperm morphology, motility, and count)
REFERENCE :
   FAATDF Fundamental and Applied Toxicology.  (Academic Press, Inc., 1 E.
   First St., Duluth, MN 55802) V.1-    1981-  Volume(issue)/page/year:
   32,72,1996

TYPE OF TEST            : TCLo - Lowest published toxic concentration
ROUTE OF EXPOSURE       : Inhalation
SPECIES OBSERVED        : Rodent - mouse
DOSE                    : 75 mg/m3/6H
SEX/DURATION            : female 4-17 day(s) after conception
TOXIC EFFECTS :
   Reproductive - Fertility - post-implantation mortality (e.g. dead and/or
   resorbed implants per total number of implants)
   Reproductive - Fertility - other measures of fertility
   Reproductive - Specific Developmental Abnormalities - craniofacial
   (including nose and tongue)
REFERENCE :
   NTIS** National Technical Information Service.  (Springfield, VA 22161)
   Formerly U.S. Clearinghouse for Scientific & Technical Information.
   Volume(issue)/page/year: DE91-005300

TYPE OF TEST            : TCLo - Lowest published toxic concentration
ROUTE OF EXPOSURE       : Inhalation
SPECIES OBSERVED        : Rodent - mouse
DOSE                    : 37 mg/m3/6H
SEX/DURATION            : female 4-17 day(s) after conception
TOXIC EFFECTS :
   Reproductive - Maternal Effects - other effects
   Reproductive - Effects on Embryo or Fetus - fetotoxicity (except death,
   e.g., stunted fetus)
REFERENCE :
   NTIS** National Technical Information Service.  (Springfield, VA 22161)
   Formerly U.S. Clearinghouse for Scientific & Technical Information.
   Volume(issue)/page/year: DE91-005300

TYPE OF TES

其他信息

• 用途一:用作半导体材料
• {Chemicalbo
• MOL 文件:
• 储运特性:库房通风低温干燥
• 可燃性危险特性:可燃;燃烧产生有毒砷化物烟雾
• 应用领域:砷化镓是继锗和硅之后的所谓第三代半导体。20世纪50年代开始研究其性质。1970年前后多种砷化镓器件的生产工艺渐趋成熟，产品已商品化。作为半导体砷化镓的性能胜过锗，还具有一些比硅好的性能(如电子迁移率高)，其器件比硅器件动作速度快，广泛用于雷达、导弹、计算机、人造卫星、宇宙飞船、导航设备、遥测系统等尖端技术。用砷化镓激光器制成的激光雷达，因用光波代替无线电波，作用距离、测距精度等都明显提高，且受干扰的因素减少。常用的砷化镓激光二极管，体积只有1立方毫米，用于制造哨兵通话、侦察、夜间监视和警戒等用的仪器。砷化镓场效应晶体管噪音低、增益高，用于微波通信线路、雷达接收器，能改善微波系统性能并降低成本。用砷化镓制造的甘氏振荡器尺寸为毫米级，要求电压低，使用寿命超过 1万小时，已用于应答器、雷达、导航信标等方面。 砷化镓和磷化镓是具有电致发光性能的半导体。
• 毒性分级:中毒
• 外延材料的制备:采用气相沉积或液相沉积等方法，使镓、砷源或其衍生物在以砷化镓或其他材料为衬底的表面上生长砷化镓或其他材料的单晶薄膜，统称为砷化镓外延材料。衬底和外延层如由同一种材料构成的则称为同质结外延层，如由不同材料构成则称为异质结外延层。外延材料可以是单层结构，也可以是多层结构。外延材料的制备方法主要有气相外延法和液相外延法。随着技术进步和应用的扩大，为适应宽禁带、多元化合物、量子阱和超晶格结构等器件制造的需要，大力探索和开发金属有机物气相沉积和分子束外延等新技术得到迅速发展。 气相外延法：通过气相输运和气相反应来实现薄膜生长的一种工艺过程。通常采用氯化物法和氢化物法生长砷化镓外延层，Ga-AsCl3-H2已成为氯化物法的代表工艺，其特点是易于实现高纯生长。1970年美国麻省理工学院华尔夫(Walf)得到砷化镓气相外延层的电子浓度和电子迁移率为n77k＝7×1013cm-3和μ77k＝2.1×105cm2/(V·s)。 液相外延法：在一定温度下的砷化镓饱和溶液，通过降温使溶液过饱和，则在砷化镓衬底上按一定的晶向生长砷化镓薄膜。据1969年的报道结果是：77K时的电子浓度和电子迁移率为n77k＝7.6×1012cm-3、μ77k＝1.75×105cm2/(V·s)。 金属有机化合物气相沉积法：用氢气把三甲基镓或三乙基镓和砷烷一起输送到反应区，经分解和相互作用，在砷化镓衬底沉积砷化镓薄膜的方法。其优点是改变原料气体的种类和浓度，容易控制生长晶体薄膜的组分和各种特性。 分子束外延法：将热分子束和原子束流在超高真空中入射到砷化镓衬底的表面上，由于相互作用而生长具有原子层级的砷化镓超薄层外延材料。其主要优点是可以生长出原子层水平的超薄层单晶膜，可严格控制膜层的厚度、组分和结构，还可用组分渐变层或应变超晶格结构来消除由于晶格失配而造成的位错，因此该法非常适合于制作光电器件、微波器件、量子阱和超晶格结构材料。
• 砷化镓单晶:砷化镓单晶的导带为双能谷结构，其最低能谷位于第一布里渊区中心，电子有效质量是0.068m0 (m0为电子质量，见载流子)，次低能谷位于方向的L点，较最低能谷约高出0.29eV，其电子有效质量为0.55m0，价带顶约位于布里渊区中心，价带中轻空穴和重空穴的有效质量分别为0.082m0和0.45m0。较纯砷化镓晶体的电子和空穴迁移率分别为8000cm2/(V·s)和100～300cm2/(V·s)，少数载流子寿命为10-2～10-3μs。在其中掺入Ⅵ族元素Te、Se、S等或Ⅳ族元素Si，可获得N型半导体，掺入Ⅱ族元素Be、Zn等可制得P型半导体，掺入Cr或提高纯度可制成电阻率高达107～108Ω·cm的半绝缘材料。由于GaAs具有很高的电子迁移率，故可用于制备高速或微波半导体器件。砷化镓还用于制作耐高温、抗辐照或低噪声器件，以及近红外发光和激光器件，也用于作光电阴极材料等。更重要的是它将成为今后发展超高速半导体集成电路的基础材料。制备GaAs单晶的方法有区熔法和液封直拉法。用扩散、离子注入、气相或液相外延及蒸发等方法可制成PN结、异质结、肖特基结和欧姆接触等。近十余年来，由于分子束外延和金属有机化学气相沉积(MOCVD)技术的发展，可在GaA
• Sigma Aldrich:1303-00-0(sigmaaldrich)